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TYPICAL PERFORMANCE CURVES (R)
APT100GN120J 1200V
APT100GN120J
E G C E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
* 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT100GN120J UNIT Volts
1200 30 153 70 300 300A @ 1200V 446 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 6mA) Gate Threshold Voltage (VCE = VGE, I C = 6mA, Tj = 25C) MIN TYP MAX Units
1200 5.0 1.4 5.8 1.7 2.0 100
2
6.5 2.1
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
600 7.5
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7623
Rev A
10-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
TBD
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT100GN120J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 100A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 100A VGE = 15V MIN TYP MAX UNIT pF V nC
6500 365 280 9.5 540 50 295 300 50 50 615 105 11 15 9.5 50 50 725 210 12 22 14 mJ
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
mJ
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 100A
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 1.0 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Waveform from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT C/W Volts
.28 N/A 2500 1.03 29.2 10 1.1
oz gm Ib*in N*m
Torque
Maximum Terminal & Mounting Torque
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages
10-2005 Rev A 050-7623
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
300 250 200
V
GE
= 15V
300
APT100GN120J
15V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C
13V
250 200 150 100 50 0
12V
11V
150
TJ = 175C
100 50 0
10V
9V 8V 7V
300 250
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1.0 2.0 3.0 4.0 5.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 100A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TJ = 150C
TJ = 125C
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V
200 TJ = 25C 150 TJ = -55C 100 50 0
8 6 4 2 0 0 100
VCE = 960V
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
200 300 400 500 GATE CHARGE (nC) FIGURE 4, Gate Charge
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 200A IC = 100A IC = 50A
IC = 200A IC = 100A
IC = 50A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 250
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75
200
150
100 10-2005 050-7623 Rev A
50
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
60 50 40 30 20 10 T = 25C, or 125C J
VCE = 800V RG = 1.0 L = 100H
1000 td (OFF), TURN-OFF DELAY TIME (ns) VGE = 15V
APT100GN120J
td(ON), TURN-ON DELAY TIME (ns)
800
600
VGE =15V,TJ=125C VGE =15V,TJ=25C
400
200
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
250
RG = 1.0, L = 100H, VCE = 800V
0
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
250
0
VCE = 800V RG = 1.0 L = 100H
200 tf, FALL TIME (ns) tr, RISE TIME (ns)
200
TJ = 125C, VGE = 15V
150
150
100
100
TJ = 25C, VGE = 15V
50
TJ = 25 or 125C,VGE = 15V
50
RG = 1.0, L = 100H, VCE = 800V
40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
80,000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
= 800V V CE = +15V V GE R = 1.0
G
0
10
40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
30,000 25,000 20,000 15,000 10,000 5000 0
= 800V V CE = +15V V GE R = 1.0
G
0
10
60,000
TJ = 125C
TJ = 125C
40,000
20,000
TJ = 25C
TJ = 25C
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
100,000 SWITCHING ENERGY LOSSES (J)
= 800V V CE = +15V V GE T = 125C
J
0
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
80,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 1.0
G
Eon2,200A
80,000
Eon2,200A
60,000
60,000
40,000
40,000
10-2005
Eoff,200A Eon2,100A Eoff,100A Eoff,50A Eon2,50A
20,000
20,000
Eoff,200A
Eon2,100A Eon2,50A Eoff,50A
Rev A
Eoff,100A
050-7623
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
10,000 IC, COLLECTOR CURRENT (A) Cies 5,000 C, CAPACITANCE ( F)
350 300 250 200 150 100 50
APT100GN120J
P
1,000 500 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
25 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
10
0.0798
0.0158
F
5
Power (watts)
0.174
0.397
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0
G
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.0266 Case temperature. (C)
28.9
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 50 70 90 110 130 150 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
050-7623
Rev A
10-2005
APT100GN120J
APT100DQ120
10% td(on)
Gate Voltage TJ = 125C tr 90%
V CC
IC
V CE
Collector Current
5%
10%
5% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage td(off) 90% tf Collector Voltage 10% TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480)
8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
14.9 (.587) 15.1 (.594)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
10-2005
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Emitter Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
050-7623
,019,522 ,182,234 5 ,089,434 5 ,045,903 5 APT's products are covered by one or more of U.S.patents 4,895,810 5
ll ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ,434,095 5 ,231,474 5 ,283,202 5 ,748,103 5 ,256,583 4 ,503,786 5 5,262,336 6

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